? 2008 ixys corporation, all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 1ma 500 v v gs(th) v ds = v gs , i d = 8ma 3.0 5.5 v i gss v gs = 30 v, v ds = 0v 200 na i dss v ds = v dss 100 a v gs = 0v t j = 125 c 5 ma r ds(on) v gs = 10v, i d = 40a, note 1 66 m ds99360b(05/08) hiperfet tm power mosfet q2-class (electrically isolated tab) n-channel enhancement mode avalanche rated, low q g , low intrinsic r g high dv/dt, low t rr IXFL80N50Q2 v dss = 500v i d25 = 55a r ds(on) 66m t rr 250ns symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c, r gs = 1m 500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c55a i dm t c = 25 c, pulse width limited by t jm 320 a i a t c = 25 c80a e as t c = 25 c5j dv/dt i s i dm , v dd v dss , t j 150 c 20 v/ns p d t c = 25 c 380 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10s 300 c t sold plastic body for 10s 260 c f c mounting force 30..120/6.7..27 n/lbs v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ weight 10 g isoplus264 tm ( ixfl) g d s isolated tab g = gate d = drain s = source features electrically isolated mounting tab double metal process for low gate resistance unclamped inductive switching (uis) rated low package inductance - easy to drive and to protect fast intrinsic diode applications dc-dc converters switched-mode and resonant-mode power supplies dc choppers pulse generation laser drivers advantages 2500 v~ electrical isolation isoplus 264 tm package for clip or spring mounting space savings high power density
ixys reserves the right to change limits, test conditions, and dimensions. IXFL80N50Q2 note: 1. pulse test, t 300 s, duty cycle, d 2 %. i f = 25a, v gs = 0v -di/dt = 100 a/ s v r = 100 v symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 40a, note 1 50 65 s c iss 12.8 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1640 pf c rss 440 pf t d(on) 29 ns t r 25 ns t d(off) 60 ns t f 11 ns q g(on) 250 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 40a 80 nc q gd 120 nc r thjc 0.33 c /w r thcs 0.15 c /w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 80 a i sm repetitive, pulse width limited by t jm 320 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 250 ns q rm 1.4 c i rm 12 a resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 40a r g = 1 (external) ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 isoplus264 tm (ixfl) outline note: bottom heatsink meets ref: ixys co 0128
? 2008 ixys corporation, all rights reserved IXFL80N50Q2 fig. 2. extended output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 101214161820 v d s - volts i d - amperes v gs = 10v 8v 5v 6v 7v fig. 3. output characteristics @ 125oc 0 10 20 30 40 50 60 70 80 024681012 v d s - volts i d - amperes 5v 6v v gs = 10v 7v fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 0123456 v d s - volts i d - amperes v gs = 10v 8v 6v 5v 7v fig. 4. r ds(on) normalized to i d = 40a v alue vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50-25 0 255075100125150 t j - degrees centigrade r d s ( o n ) - normalized i d = 80a i d = 40a v gs = 10v fig. 5. r ds(on) normalized to i d = 40a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 0 20 40 60 80 100 120 140 160 180 200 i d - amperes r d s ( o n ) - normalized t j = 125oc t j = 25oc v gs = 10v fig. 6. drain current vs. case te mpe rature 0 10 20 30 40 50 60 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXFL80N50Q2 ixys ref: f_80n50q2(95) 5-2-08-g fig. 11. capacitance 100 1000 10000 100000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - pf c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 40 80 120 160 200 240 280 q g - nanocoulombs v g s - volts v ds = 250v i d = 40a i g = 10ma fig. 7. input admittance 0 20 40 60 80 100 120 140 3.54.04.55.05.56.06.57.07.5 v g s - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 0 20 40 60 80 100 120 140 160 180 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. source current vs. source-to-drain voltage 0 40 80 120 160 200 240 0.40.60.81.01.21.41.6 v s d - volts i s - amperes t j = 125oc t j = 25oc fig. 12. maximum transient thermal impedance 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th) j c - (oc/w)
|
